s bp10l40ct sbp10l40fct sbp10l40ck s bp10l40cg 1 0a low vf schottky rectifier features ? ultra low forward voltage drop ? excellent high temperature stability ? patented super barrier rectifier technology ? soft, fast switching capability mechanical data ? case: to-220ab, ito-220ab,to-262ab,to-263ab ? case material: molded plastic, ul flammability classification rating 94v-0 ? terminals: matte tin finish annealed over copper leadframe. solderable per mil-std-202, method 208 1 / 5 may.2015-rev.00 www.dy elec.com ordering information part no. package packing to-220ab 50pcs / tube sbp10l40ct ito-220ab 50pcs / tube sbp10l40fct to-262ab 50pcs / tube sbp10l40ck to-263ab 50pcs / tube sbp10l40cg to-263ab 800pcs / reel sbp10l40cg maximum ratings(t a =25 o c unless otherwise noted) note : 1. mounted on infinite heatsink. parameter symbol value unit maximum repetitive peak reverse voltage v rrm 40 v maximum average forward rectified current per diode per device i f(av) 10 5 a peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode i fsm 120 a typical junction capacitance (v r =4v, f=1mhz) c j 500 pf typical thermal resistance per diode (note 1) r ? jc 15 o c/w operating junction temperature range t j -55 to + 150 o c storage temperature range t stg -55 to + 150 o c maximum rms voltage v rms 28 v
2 / 5 may.2015-rev.00 www.dy elec.com s bp10l40ct s bp10l40fct s bp10l40ck s bp10l40cg electrical characteristics(t a =25 o c unless otherwise noted) percent of rated peak reverse voltage (%) fig.3 typical reverse characteristics v f , forward voltage (v) fig.4 typical forward characteristics t c , case temperature ( c) fig.1 forward current derating curve v r , reverse bias voltage (v) fig.2 typical junction capacitance rating and characteristic curves parameter symbol test conditions min. typ. max. unit breakdown voltage per diode v br i r =0.5ma 40 - - v instantaneous forward voltage per diode v f i f =1a i f =5a t j =25 o c 0.32 0.43 - 0.50 v i f =1a i f =5a t j =125 o c - - - - 0.23 0.37 - - v reverse current per diode i r vr=32v - 100 - ? a vr=40v t j =25 o c t j =125 o c - - - 20 250 - ? a ma 0 1 2 3 4 5 6 0 25 50 75 100 125 150 i f , forward current (a) per diode 1 10 100 1000 11 01 0 0 c j , junction capacitance (pf) per diode 0.01 0.1 1 10 100 20 40 60 80 100 i r , reverse current (ma) t j = 25 c t j = 75 c t j = 125 c t j = 150 c per diode 0.1 1 10 100 0 0.2 0.4 0.6 i f , forward current (a) t j = 150 c t j = 125 c t j = 25 c t j = 75 c per diode
package outline dimensions 3 / 5 may.2015-rev.00 www.dy elec.com sbp10l40ct sbp10l40fct sbp10l40ck sbp10l40cg
package outline dimensions 4 / 5 may.2015-rev.00 www.dyelec.com s bp10l40ct s bp10l40fct s bp10l40ck s bp10l40cg
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